Ampleon has announced two new wideband amplifier series: the 32V-rated BLP15M9Sxxx and the 50V-rated BLP15H9Sxxx devices. Both BLP15M9Sxxx and BLP15H9Sxxx are based on 9th generation LDMOS and high-voltage LDMOS technologies respectively, and support frequencies of up t
Efficient Power Conversion (EPC) has added EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN FET to a new family of radiation-hardened gallium nitride transistors and integrated circuits.
BC547 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin.
The MasterGaN2 from STMicroelectronics has been designed with two asymmetric gallium-nitride(GaN) transistors for delivering an integrated GaN solution suited to soft-switching and active-rectification
2SC828 is an NPN, Silicon-based AF Amplifier Transistor that is mainly used in AF based audio equipment for amplification and switching. It has a Collector-Emitter Voltage of 45 Vdc with a Collector-Base voltage of 45 Vdc.
2N5457 is an N-Channel Depletion layer Junction Field Effect Transistor. This JFET is an N- Channel - Depletion layer JFET that is widely used in audio equipment for amplification, tone modulation, and other purposes.