IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.
IRF9540 is a P-channel MOSFET that can drive maximum load current up to -19A and voltage up to -100V. In pulse mode, it can withstand a load up to -72A. IRF9540 is designed to have low on-state resistance and fast switching.
IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost.
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
Intended to offer more choice to power system designers, Infineon Technologies has introduced diverse design options that can offer maximum performance in the smallest space.
Microchip Technology has introduced the M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET for the operation against extreme particle interactions and solar and electromagnetic events in commercial aerospace and defense space applications.