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SiC MOSFET

New 1700V Silicon Carbide MOSFET and Schottky Diodes
New 1700V Silicon Carbide MOSFET and Schottky Diodes

Onsemi Introduces New 1700V Silicon Carbide MOSFET and Schottky Diodes for Energy Infrastructure and Industrial Applications

Onsemi, recently revealed the name of its silicon carbide (SiC) family to be "EliteSiC".
ACEPACK Power Modules with SiC MOSFETs
ACEPACK Power Modules with SiC MOSFETs

New ACEPACK Power Modules with SiC MOSFETs Designed for DC/DC Converters

STMicroelectronics has released two new STPOWER modules that use ST’s ACEPACK 2 package technology to ensure high power density and contain 1200V silicon-carbide (SiC) MOSFETs in popular
TO-Leadless Packaged Silicon Carbide MOSFET
TO-Leadless Packaged Silicon Carbide MOSFET

New TO-Leadless Packaged Silicon Carbide MOSFET with Low Output Capacitance and 30% Savings in PCB Area

onsemi has announced the new TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET that addresses the rapidly growing need for high-performance switching devices which are suitable for designs with high levels of power density.
3.3 kV SiC MOSFETs and High Current-rated SiC SBDs
3.3 kV SiC MOSFETs and High Current-rated SiC SBDs

3.3 kV SiC MOSFETs and High Current-rated SiC SBDs designed to Develop Efficient Solutions for Electrified Transportation and Industrial Applications

Microchip Technology Inc. has announced the expansion of its SiC portfolio with the release of the lowest on-resistance [RDS(on)]
650V CoolSiC MOSFETs
650V CoolSiC MOSFETs

650V CoolSiC MOSFETs with Increased avalanche Capability target High Power Applications and offer Improved Switching Behavior

Infineon Technologies AG has introduced a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs that is built on Infineon’s st
SiC MOSFET Dual Modules
SiC MOSFET Dual Modules

High-Power SiC MOSFET Dual Modules with Built-in NTC Thermistor designed for Renewable Energy Power Generation Systems

Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions
Latest-Generation Silicon-Carbide Power Devices
Latest-Generation Silicon-Carbide Power Devices

Latest-Generation Silicon-Carbide Power Devices for Fast-Charging EV Infrastructures and Industrial Applications

STMicroelectronics has introduced its third generation of STPOWER silicon-carbide (SiC) MOSFETs that leverage the new third-genera
Galvanically Isolated 4A SiC Gate Driver
Galvanically Isolated 4A SiC Gate Driver

Galvanically Isolated 4A SiC Gate Driver Enhances Robustness and Reliability in Energy-Conscious Power Systems

STMicroelectronics has introduced a single-channel gate driver STGAP2SiCSN which comes in a space-saving narrow-body SO-8 package and is opt
AgileSwitch 2ASC-12A2HP Digital Gate Driver
AgileSwitch 2ASC-12A2HP Digital Gate Driver

AgileSwitch Digital Gate Driver with Augmented Switching Technology for Silicon Carbide MOSFETs

Microchip Technology Inc. has announced a new 1200V production-ready digital gate driver to complement its broad portfolio of silicon carbide MOSFET discrete and module products.
Gen 4 SiC FETs
Gen 4 SiC FETs

New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility

UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.