High Performance 750V SiC FET Portfolio with Low RDS Designed for Onboard Chargers and IT Power Supplies

Qorvo has announced seven 750V silicon carbide (SiC) FETs in surface mount D2PAK-7L package that are tailored for the rapidly growing applications of onboard chargers, soft-switched DC/DC converters, battery charging (fast DC and industrial), and IT/server power supplies. These devices deliver an optimal solution for high-power applications that require maximum efficiency, low conduction losses, and excellent cost-effectiveness in a thermally enhanced package. Highlighted by the low RDS(on) of 9 milliohms (mohms) at 650/750V, the Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44, and 60 mohms.

Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class RDS x A figure of merit, resulting in the lowest conduction losses in a small die.

Features

• 750V

• Low RDS(on) from 6mΩ to 60mΩ

• Industry's best Figures of Merit (FoM)

• 5µs short-circuit withstand time @ 6mΩ

• Excellent reverse recovery

• Low body diode, gate charge, and intrinsic capacitance

• ESD protected, HBM class 2

• Industry standard TO-247-3L, TO-247-4L, and D2PAK-7L packaging

Applications

• Onboard chargers

• Soft-switched DC/DC converters

• Battery charging

• IT/server power supplies

Availability and Pricing

All these devices are available now. Pricing (1000-up, FOB USA) for the new 750V Gen 4 SiC FETs in the D2PAK-7L package ranges from $3.50 for the UJ4C075060B7S to $18.92 for the UJ4SC075009B7S.